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| 2N3958 Vishay Siliconix Monolithic N-Channel JFET Dual PRODUCT SUMMARY VGS(off) (V) -1.0 to -4.5 V(BR)GSS Min (V) -50 gfs Min (mS) 1 IG Max (pA) -50 jVGS1 - VGS2j Max (mV) 25 FEATURES D D D D D D Monolithic Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 5 pA Low Noise: 9 nVHz High CMRR: 100 dB BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High Speed Comparators D Impedance Converters DESCRIPTION The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The hermetically-sealed TO-71 package is available with full military processing (see Military Information and the 2N5545/5546/5547JANTX/JANTXV data sheet). For similar products see 2N5196/5197/5198/5199, the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-71 S1 1 D1 6 G2 2 5 D2 3 G1 Top View 4 S2 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70256 S-04031--Rev. B, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C www.vishay.com 8-1 2N3958 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current V(BR)GSS VGS(off) IDSS IGSS IG = -1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA VDS = 20 V, VGS = 0 V VGS = -30 V, VDS = 0 V TA = 150_C VDG = 20 V, ID = 200 mA TA =125_C VDG = 20 V, ID = 200 mA ID = 50 mA IG = 1 mA, VDS = 0 V -0.5 -50 -1.0 0.5 -57 V -2 3 -10 -20 -5 -0.8 -1.5 -4.5 5 -100 -500 -50 -250 -4 -4.2 2 V mA pA nA pA nA Symbol Test Conditions Min Typa Max Unit Gate Operating Current IG Gate-Source Voltage Gate-Source Forward Voltage VGS VGS(F) Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Drain-Gate Capacitance Equivalent Input Noise Voltage Noise Figure gfs gos Ciss Crss Cdg en NF VDS = 20 V, VGS = 0 V f = 1 MHz VDG = 10 V, IS = 0 , f = 1 MHz VDS = 20 V, VGS = 0 V, f = 1 kHz VDS = 20 V, VGS = 0 V f = 100 Hz, RG = 10 MW 9 0.5 VDS = 20 V, VGS = 0 V f = 1 kHz 1 2.5 2 3 1 3 35 4 1.2 1.5 nV Hz dB pF mS mS Matching Differential Gate-Source Voltage Gate-Source Voltage Differential Change with Temperature |V GS1-V GS2| D|V GS1-V GS2| DT I DSS1 I DSS2 gfs1 gfs2 |g os1-g os2| |I G1-I G2| CMRR VDG = 20 V, ID = 200 mA TA = 125_C VDG = 10 to 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA VDG = 20 V, ID = 200 mA TA = -55 to 125_C 15 25 mV mV/_C 20 100 Saturation Drain Current Ratio VDS = 20 V, VGS = 0 V 0.85 0.97 1 Transconductance Ratio 0.85 VDS = 20 V, ID = 200 mA f = 1 kHz 0.97 1 Differential Output Conductance 0.1 mS Differential Gate Current Common Mode Rejection Ratioc 0.1 100 10 nA dB NQP Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. www.vishay.com 8-2 Document Number: 70256 S-04031--Rev. B, 04-Jun-01 2N3958 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 5 IDSS - Saturation Drain Current (mA) 3 gfs - Forward Transconductance (mS) 100 nA IG @ ID = 200 mA 10 nA TA = 125_C I G - Gate Leakage 1 nA IGSS @ 125_C 100 pA 200 mA 50 mA IGSS @ 25_C 50 mA Gate Leakage Current 4 gfs 3 IDSS 2.6 2.2 2 1.8 10 pA TA = 25_C 1 pA 1 IDSS @ VDS = 15 V, VGS = 0 V gfs @ VDG = 15 V, VGS = 0 V f = 1 kHz 1.4 0 0 -1 -2 -3 -4 -5 1 0.1 pA 0 10 20 30 40 50 VDG - Drain-Gate Voltage (V) VGS(off) - Gate-Source Cutoff Voltage (V) Output Characteristics 5 VGS(off) = -2 V 4 I D - Drain Current (mA) I D - Drain Current (mA) 4 5 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V 3 -0.9 V 2 -1.2 V -1.5 V 1 -1.8 V -2.1 V 0 20 0 4 8 12 16 -2.4 V 20 3 VGS = 0 V -0.2 V 2 -0.4 V -0.6 V -0.8 V 1 -1.0 V -1.2 V 0 0 4 8 12 -1.4 V 16 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Output Characteristics 2 VGS(off) = -2 V 1.6 I D - Drain Current (mA) VGS = 0 V -0.2 V -0.4 V 1.2 -0.6 V -0.8 V 0.8 -1.0 V 0.4 -1.2 V -1.4 V 0 0 0.2 0.4 0.6 0.8 -1.6 V 1 0 0 0.2 I D - Drain Current (mA) 2.0 2.5 Output Characteristics VGS(off) = -3 V VGS = 0 V -0.3 V -0.6 V -0.9 V 1.5 -1.2 V 1.0 -1.5 V -1.8 V 0.5 -2.1 V -2.4 V 0.4 0.6 0.8 1 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Document Number: 70256 S-04031--Rev. B, 04-Jun-01 www.vishay.com 8-3 2N3958 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 5 VGS(off) = -2 V 4 I D - Drain Current (mA) (mV) VDS = 20 V 100 VDG = 20 V TA = 25_C Gate-Source Differential Voltage vs. Drain Current VGS1 - VGS2 -1.5 -2.0 -2.5 3 TA = -55_C 25_C 2 10 1 125_C 0 0 -0.5 -1.0 VGS - Gate-Source Voltage (V) 1 0.01 0.1 ID - Drain Current (mA) 1 Voltage Differential with Temperature vs. Drain Current 100 VDG = 20 V ( m V/ _C ) 120 DTA = 25 to 125_C CMRR (dB) 110 130 Common Mode Rejection Ratio vs. Drain Current CMRR = 20 log DVDG DV GS1 - VGS2 VGS1 - VGS2 10 Dt DTA = -55 to 25_C DVDG = 10 - 20 V 100 5 - 10 V 90 D 1 0.01 80 0.1 ID - Drain Current (mA) 1 0.01 0.1 ID - Drain Current (mA) 1 Circuit Voltage Gain vs. Drain Current 100 rDS(on) - Drain-Source On-Resistance ( ) 1k On-Resistance vs. Drain Current 80 A V - Voltage Gain 800 60 VGS(off) = -3 V -2 V 600 VGS(off) = -2 V 400 -3 V 200 40 AV + 20 g fs R L 1 ) R Lg os 10 V ID 0.1 ID - Drain Current (mA) Assume VDD = 15 V, VDS = 5 V RL + 0 0.01 0 1 0.01 0.1 ID - Drain Current (mA) Document Number: 70256 S-04031--Rev. B, 04-Jun-01 1 www.vishay.com 8-4 2N3958 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 10 C rss - Reverse Feedback Capacitance (pF) f = 1 MHz 8 5 f = 1 MHz 4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage C iss - Input Capacitance (pF) 6 VDS = 0 V 4 5V 15 V 2 20 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) 3 VDS = 0 V 5V 2 15 V 1 20 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Equivalent Input Noise Voltage vs. Frequency 20 VDS = 20 V gos - Output Conductance (S) 16 ID @ 200 mA 12 2.0 2.5 Output Conductance vs. Drain Current VGS(off) = -2 V VDS = 20 V f = 1 kHz Hz en - Noise Voltage nV / TA = -55_C 1.5 8 VGS = 0 V 1.0 25_C 4 0.5 125_C 0 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0.01 0.1 ID - Drain Current (mA) 1 Common-Source Forward Transconductance vs. Drain Current 2.5 VGS(off) = -2 V gfs - Forward Transconductance (mS) 2.0 TA = -55_C 1.5 25_C 1.0 VDS = 20 V f = 1 kHz rDS(on) - Drain-Source On-Resistance ( ) 1k On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 10 g os- Output Conductance ( mS) 800 gos 8 600 6 400 rDS 4 0.5 125_C 0 0.01 0.1 ID - Drain Current (mA) 1 200 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS = 20 V, VGS = 0 V, f = 1 kHz 0 0 -1 -2 -3 -4 -5 2 0 VGS(off) - Gate-Source Cutoff Voltage (V) Document Number: 70256 S-04031--Rev. B, 04-Jun-01 www.vishay.com 8-5 |
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